MBRT60045

Overview

The GeneSiC Semiconductor MBRT60045 is a silicon power Schottky diode module featuring a three-tower package with an electrically isolated base plate. It supports a repetitive peak reverse voltage of 45 V and delivers an average forward current of 600 A per package. The device exhibits a maximum instantaneous forward voltage of 0.75 V at 300 A and maintains a junction temperature range from -55 °C to +150 °C. Its thermal resistance from junction to case is 0.28 °C/W per leg, ensuring efficient heat dissipation in high-power applications.

Feature Summary

• High surge capability designed for demanding power environments
• Electrically isolated base plate providing safety and mounting flexibility
• Three tower package configuration for robust structural integrity

Applications

• High-current rectification circuits
• Industrial power conversion systems
• DC-DC converter modules

Procurement Notes

Verify the specific suffix designation against official documentation to confirm terminal orientation, as variants may feature reversed leads. Confirm RoHS compliance status through the manufacturer's latest product data sheet before integration into regulated assemblies.

Selection Notes

Select this component when a 45 V rating and 600 A continuous current capacity are required within a thermally efficient isolated package. Ensure the application design accommodates the specified thermal resistance and operating temperature limits for reliable long-term performance.

Part Context

This module belongs to the MBRT600 series, which encompasses devices ranging from 45 V to 100 V reverse voltage ratings. All members share the same three-tower physical footprint and 600 A current handling capabilities, differing primarily in their blocking voltage specifications.

Replacement Considerations

MBRT60045R serves as a confirmed substitute variant with reversed leads. Other series members like MBRT60060 offer higher voltage ratings but maintain identical current and thermal characteristics.