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The GeneSiC Semiconductor MBRTA40020RL is a Schottky diode array module designed for high-current power applications. It features a 1 Pair Common Anode configuration with a maximum repetitive peak reverse voltage of 20 V and an average forward rectified current of 200 A per diode. The device utilizes Silicon technology and operates within a junction temperature range of -55°C to +150°C. It employs a screw mount installation style within a 3-Tower package, offering low forward voltage characteristics suitable for efficient power conversion systems.
Verify the specific manufacturer designation, as some listings associate this part number with Navitas Semiconductor due to corporate acquisitions. Confirm the package type matches the required 3-Tower form factor rather than the Twin Tower variant found in similar series models. Ensure compliance with RoHS standards if required by the end application specifications.
Select this component when a common anode dual diode configuration is required for currents up to 200 A. The 20 V rating limits its use to low-voltage applications. Compare against MBR40020CTRL for alternative packaging options, noting that the CTRL variant uses a Twin Tower package while this RL variant uses a 3-Tower structure. Evaluate thermal management requirements based on the 150°C maximum junction temperature limit.
This model belongs to the GeneSiC Semiconductor MBRTA series of Schottky diode modules. These components are engineered for high-efficiency power rectification in industrial and automotive electronics. The series offers various voltage and current ratings, with this specific part providing a balance of moderate voltage blocking and high current capacity in a compact multi-tower package.
Public confirmed substitute part numbers: None identified.