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The MBRTA40035RL is a low forward voltage silicon power Schottky diode manufactured by GeneSiC Semiconductor. It features a Three Tower package configuration with a repetitive peak reverse voltage of 35V and a maximum average forward current rating of 200A. The device utilizes a screw mount installation style suitable for high-power applications.
Verify the specific suffix 'RL' against official GeneSiC documentation to confirm lead orientation and pinout compatibility. Ensure thermal management requirements align with the package's isolation characteristics and mounting constraints for reliable long-term performance.
Select this component for applications requiring low conduction losses at moderate reverse voltages. The 200A current rating and 35V blocking capability define its operational envelope. Consider the Three Tower package dimensions and screw mounting method for mechanical integration into the target system.
This part belongs to the MBRTA series of low VF silicon power Schottky diodes from GeneSiC Semiconductor. It shares the Three Tower package family with other variants but is distinguished by its specific 35V voltage rating and 200A current capacity, differentiating it from higher or lower rated siblings.
Cross-reference with MBRH20035 or similar GeneSiC Schottky modules if available. Verify that substitute parts match the 35V VRRM, 200A IF(AV), and Three Tower package specifications to ensure electrical and mechanical interchangeability.