MBRTA40040L

MBRTA40040L

  • Description:DIODE MOD SCHOTT 40V 200A 3TOWER
  • Series:-

SKU:ee0866c7e5a7 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE MOD SCHOTT 40V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):40 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:600 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 40 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MBRTA40040L

Overview

The MBRTA40040L is a low forward voltage silicon power Schottky diode manufactured by GeneSiC Semiconductor. It features a Twin Tower package configuration with two elements in a common anode arrangement. The device supports a repetitive peak reverse voltage of 40V and an average forward current of 200A per element, with a maximum non-repetitive peak forward surge current of 3000A. Key electrical parameters include a maximum DC blocking voltage of 40V and a maximum forward voltage of 0.65V at specified conditions. The component operates within a junction temperature range of -55°C to 175°C.

Feature Summary

  • Low forward voltage design for enhanced efficiency
  • High surge capability for robust performance
  • Electrically isolated base plate construction

Applications

  • Power supply rectification
  • Free-wheeling diodes in high-current circuits
  • DC-DC converter output stages

Procurement Notes

Verify the specific suffix 'L' against official GeneSiC documentation to confirm lead configuration or variant specifics, as standard part numbers may differ. Ensure the procurement channel provides valid RoHS compliance certificates. Cross-reference the package marking with the datasheet to prevent counterfeit components. Confirm thermal management requirements align with the Twin Tower package specifications before finalizing orders.

Selection Notes

Select this component for applications requiring high current handling with minimal conduction losses. The 40V rating suits low-voltage DC systems. Consider the common anode topology for synchronous rectification or bridge configurations. Evaluate thermal resistance characteristics against the system's heat dissipation capabilities. Compare the forward voltage drop against alternative Schottky diodes to optimize overall system efficiency.

Part Context

This part belongs to the GeneSiC Silicon Power Schottky Diode family, designed for high-efficiency power conversion. It utilizes a Twin Tower package to provide reliable isolation and mounting options. The series offers various voltage ratings from 20V to 100V, maintaining consistent current handling capabilities across the lineup for scalable power design solutions.

Replacement Considerations

Consult official cross-reference guides for compatible alternatives. Verify that substitute parts match the 40V reverse voltage, 200A current rating, and common anode configuration. Ensure physical package dimensions and terminal compatibility are identical to maintain board layout integrity.

MBRTA40040LMBRTA40040L

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