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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 20V 250A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：20 V
- Current - Average Rectified (Io) (per Diode)：250A
- Voltage - Forward (Vf) (Max) @ If：700 mV @ 250 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 20 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA50020 is a silicon super fast recovery rectifier diode module manufactured by GeneSiC Semiconductor, now part of Navitas. It features a 200 V reverse voltage rating and a 500 A forward current capacity. The module utilizes a Three Tower ISO VR package with screw mount installation. It operates within a temperature range of -55 °C to +150 °C junction temperature. The typical forward voltage is 1.3 V. This component is designed for high-power industrial applications requiring robust performance.
Feature Summary
- High current handling capability with 500 A continuous forward current
- Super fast recovery technology for efficient power conversion
- Robust thermal management suitable for demanding environments
- Secure screw mount mechanical connection
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-power DC-DC converters
Procurement Notes
Verify the current lifecycle status as the product may be discontinued or subject to limited availability. Confirm that the manufacturer designation reflects the acquisition by Navitas Semiconductor. Ensure compatibility with existing cooling systems due to the specific thermal characteristics of the Three Tower ISO VR package. Check for any updated datasheets reflecting post-acquisition specifications.
Selection Notes
Select this module when high current density and fast switching are required in silicon-based designs. Compare against other MURTA series variants for different voltage ratings. Ensure the mounting hardware supports the screw mount style. Verify that the system can handle the thermal dissipation associated with the 1.3 V forward voltage drop at full load.
Part Context
This component belongs to the MURTA500 series of high-power diode modules from GeneSiC Semiconductor. The series is characterized by its use in heavy-duty power electronics. GeneSiC was acquired by Navitas Semiconductor, integrating its silicon expertise into the broader portfolio. The Three Tower ISO VR package provides isolation and mechanical stability for high-voltage applications.
Replacement Considerations
Consult official cross-reference lists for direct substitutes. Consider other models within the MURTA500 series if voltage requirements differ. Verify pinout and thermal pad configurations before replacing with similar screw-mount modules from other manufacturers.
