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Product Detailed Parameters
- Description：DIODE MOD SCHOT 150V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：150 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：880 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：4 mA @ 150 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MBRTA600150 is a silicon power Schottky diode module designed for high-current applications. It features a common cathode configuration with two diodes in a single package. The device supports a maximum repetitive reverse voltage of 150V and a continuous forward current of 300A. It utilizes a Three Tower package style, facilitating efficient thermal management and robust mechanical mounting for industrial power systems.
Feature Summary
- Common cathode dual-diode architecture for synchronized rectification
- Three Tower chassis mount package for enhanced heat dissipation
- Silicon-based Schottky technology ensuring low forward voltage drop
Applications
- DC-DC converter circuits
- Power supply freewheeling applications
- Industrial motor drive rectification
Procurement Notes
Verify the specific suffix designation to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status and lead-free certification requirements prior to integration. Ensure thermal interface material compatibility with the Three Tower mounting surface for optimal performance.
Selection Notes
Select this component when a common cathode dual-diode configuration is required within a 150V system limit. Evaluate the 300A current rating against peak load demands. Consider the Three Tower package dimensions for chassis space constraints and verify screw-mounting hardware availability for secure installation.
Part Context
This part belongs to the MBRTA series of silicon power Schottky diodes from GeneSiC Semiconductor. It represents a high-current discrete solution distinct from lower-amperage variants or different voltage ratings within the same product family, specifically engineered for robust industrial power conversion environments.
Replacement Considerations
Cross-reference with MBRTA600150R for potential minor specification variations. Verify pinout compatibility and thermal resistance values before substituting with other 150V 300A Three Tower modules.
