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MBRTA600200R is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 300A 3TOWER. Review the specifications below when checking this part for your BOM.
The MBRTA600200R is a silicon Schottky diode module manufactured by GeneSiC Semiconductor, now under Navitas. It features a Three Tower package with a maximum repetitive reverse voltage of 200V and a forward current rating of 300A. The typical forward voltage drop is 920mV at full load, while the reverse leakage current is specified at 200mA. This component supports an operating temperature range from -55°C to +150°C and utilizes screw mount installation for secure thermal management in high-power applications.
Verify manufacturer alignment as production has transitioned to Navitas Semiconductor. Confirm specific datasheet revisions for electrical tolerances. Ensure mounting hardware specifications match the Three Tower form factor. Validate RoHS compliance status against current regulatory requirements before finalizing procurement orders.
Select this module for applications requiring high current handling with low forward voltage loss. The Three Tower design facilitates efficient heat dissipation through chassis mounting. Consider the 200V reverse voltage limit when designing circuit topologies. Evaluate thermal resistance requirements to ensure reliable operation within the specified temperature range.
This component belongs to the MBRTA series of high-power Schottky diode arrays. It represents a specialized discrete solution for demanding power electronics environments. The product line focuses on maximizing efficiency and reliability in industrial-grade semiconductor applications.
MBRTA600200RL serves as a related variant within the same product family.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.