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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 35V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：35 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：600 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：3 mA @ 35 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA60035RL is a low forward voltage silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a common anode configuration with two elements housed in a Three Tower package. The device supports a repetitive peak reverse voltage of 35V and an average forward current of 300A. Key electrical parameters include a maximum non-repetitive peak forward surge current of 4000A, a maximum DC blocking voltage of 35V, and a maximum RMS reverse voltage of 24.5V. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low forward voltage design for enhanced efficiency
- Common anode dual element configuration
- High surge current capability
- Robust Three Tower package construction
Applications
- Power supply circuits
- DC-DC converter modules
- Free-wheeling rectification in high-current systems
Procurement Notes
Verify the specific manufacturer source, as GeneSiC assets are integrated into broader semiconductor portfolios. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer's official channels. Ensure the procurement channel provides valid traceability documentation for this specific part number before finalizing orders.
Selection Notes
Select this component for applications requiring high current handling at low voltage levels. The common anode topology simplifies circuit layout for synchronous or parallel configurations. Evaluate thermal management requirements based on the 300A rating and ensure the mounting interface matches the Three Tower package specifications for optimal heat dissipation.
Part Context
This module belongs to the MBRTA series of silicon power Schottky diodes from GeneSiC Semiconductor. The series is characterized by robust construction and low forward voltage characteristics suitable for demanding power electronics environments. The Three Tower package provides a standardized mechanical form factor for industrial power applications.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Potential alternatives may include other 35V 300A common anode Schottky modules from compatible manufacturers, provided they match the pinout and thermal characteristics.
