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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 20V 400A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：20 V
- Current - Average Rectified (Io) (per Diode)：400A
- Voltage - Forward (Vf) (Max) @ If：580 mV @ 400 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：3 mA @ 20 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA80020RL is a silicon power Schottky rectifier module manufactured by GeneSiC Semiconductor. It features a three-tower (3TWR) package with an isolated case connection and plastic/epoxy encapsulation. The device contains two elements in a common cathode configuration, rated for a maximum repetitive reverse voltage of 20 V and a continuous forward current of 400 A. It operates within a junction temperature range of -55 °C to 150 °C and supports a non-repetitive peak forward surge current of 800 A.
Feature Summary
- Utilizes silicon Schottky technology for low forward voltage drop and fast switching characteristics
- Features a three-tower chassis mount package design with an electrically isolated case
- Provides high current handling capability suitable for demanding power conversion applications
Applications
- High-current DC-DC converters
- Industrial power supply freewheeling circuits
- Battery management systems requiring robust rectification
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical ratings and pinout configurations. Ensure that the procurement channel provides valid traceability documentation for the component. Confirm compliance with RoHS standards and lead-free status as specified in the product parameters before finalizing acquisition.
Selection Notes
Select this component for applications requiring high average forward current and low conduction losses at low blocking voltages. The three-tower package facilitates efficient thermal dissipation through direct chassis mounting. Evaluate the thermal resistance requirements and ensure the system can accommodate the specified operating temperature range and surge current capabilities during transient conditions.
Part Context
This part belongs to the GeneSiC MBRT series of silicon power Schottky diodes. These modules are designed for high-efficiency power rectification in industrial and automotive environments. The series offers various voltage and current ratings packaged in standardized three-tower formats to simplify mechanical integration and thermal management in high-power electronic systems.
Replacement Considerations
Consult official cross-reference lists for compatible alternatives. Verify that any substitute matches the 400 A current rating, 20 V voltage rating, and three-tower package dimensions.
