MBRTA80030

MBRTA80030

  • Description:DIODE MOD SCHOTT 30V 400A 3TOWER
  • Series:-

SKU:2960b25b9c5b Category: Brand:

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Product Detailed Parameters

  • Description:DIODE MOD SCHOTT 30V 400A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):400A
  • Voltage - Forward (Vf) (Max) @ If:720 mV @ 400 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 30 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MBRTA80030

Overview

The MBRTA80030 is a silicon power Schottky diode manufactured by GeneSiC Semiconductor. It features a 30V reverse voltage rating and supports a continuous forward current of 400A. The device utilizes a 3-Tower package configuration, designed for high-current applications requiring low forward voltage drop and fast switching characteristics typical of Schottky rectifiers.

Feature Summary

  • High current handling capability with 400A continuous forward current
  • Low forward voltage drop for improved efficiency
  • Fast switching speed inherent to Schottky technology
  • Robust 3-Tower package design for thermal management

Applications

  • High-power DC-DC converters
  • Freewheeling rectification in motor drives
  • Industrial power supply units
  • Battery charging systems

Procurement Notes

Verify the specific pinout and thermal pad configuration against the official datasheet before integration. Confirm that the 3-Tower package dimensions match the PCB footprint requirements. Check for any RoHS compliance status updates from the manufacturer, as legacy components may have varying environmental declarations. Ensure adequate heatsinking is planned given the high current rating.

Selection Notes

Select this component when designing circuits requiring high surge current capacity and low conduction losses at low voltages. The 30V rating limits its use to low-voltage bus applications. Consider the physical size of the 3-Tower package for board space constraints. Compare total system efficiency gains from lower forward voltage against potential cost implications compared to standard silicon diodes.

Part Context

This part belongs to the GeneSiC semiconductor portfolio, specifically within their silicon power diode line rather than their silicon carbide (SiC) MOSFET series. It serves as a discrete rectifier solution for applications where traditional silicon performance is sufficient but high current density is required. The 3-Tower form factor distinguishes it from standard axial or surface-mount diodes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Users should consult the manufacturer's official replacement guide or contact technical support directly for cross-reference information.

MBRTA80030MBRTA80030

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