MBRTA80030L

MBRTA80030L

  • Description:DIODE MOD SCHOTT 30V 400A 3TOWER
  • Series:-

SKU:3f75997d2d12 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE MOD SCHOTT 30V 400A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):400A
  • Voltage - Forward (Vf) (Max) @ If:580 mV @ 400 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 30 V
  • Operating Temperature - Junction:-40°C ~ 100°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MBRTA80030L

Overview

The GeneSiC Semiconductor MBRTA80030L is a silicon Schottky diode module designed for high-power applications. It features a three-tower chassis mount package configuration with a maximum repetitive reverse voltage of 30 V and an average rectified forward current rating of 400 A. The device utilizes a common cathode arrangement within a single-phase, two-element structure. Operating specifications include a minimum temperature of -55°C and a maximum junction temperature of +150°C, ensuring reliability in demanding thermal environments.

Feature Summary

  • High current handling capability via 400 A average rectified forward current rating
  • Robust thermal management supporting operation up to +150°C junction temperature
  • Low forward voltage drop characteristic inherent to silicon Schottky technology
  • Durable three-tower chassis mount packaging for secure mechanical installation

Applications

  • Industrial power supply units requiring high current rectification
  • DC-DC converter circuits in energy storage systems
  • Motor drive inverters and control electronics
  • Solar inverter input stages

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix designation matches project requirements, as variations may exist within the product line. Check for end-of-life status updates prior to finalizing procurement plans to ensure long-term supply availability.

Selection Notes

Select this component when designing systems necessitating high-current DC rectification at low voltage levels. Ensure the thermal design accommodates the specified +150°C maximum operating limit. Verify that the chassis mounting interface aligns with the mechanical constraints of the target enclosure or heat sink assembly.

Part Context

This part belongs to the GeneSiC Semiconductor high-power silicon diode portfolio. The manufacturer specializes in both silicon carbide and advanced silicon discrete technologies. This specific module represents their commitment to robust power conversion solutions for industrial and renewable energy sectors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources for cross-reference data.

MBRTA80030LMBRTA80030L

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