MBRTA80035

MBRTA80035

  • Description:DIODE MOD SCHOTT 35V 400A 3TOWER
  • Series:-

SKU:d381956879c9 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE MOD SCHOTT 35V 400A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):400A
  • Voltage - Forward (Vf) (Max) @ If:720 mV @ 400 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 35 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MBRTA80035

Overview

The MBRTA80035 is a silicon power Schottky diode array manufactured by GeneSiC Semiconductor. It features a three-tower configuration with one pair of common cathode elements, designed for high-current applications. The device is rated for a maximum repetitive peak reverse voltage of 35 V and a maximum output current of 400 A. It utilizes a chassis mount package form factor, specifically the Three Tower style, to facilitate efficient thermal management in demanding power electronics environments.

Feature Summary

  • Utilizes silicon Schottky technology for rectification
  • Features a three-tower chassis mount package design
  • Configured as a single pair common cathode array

Applications

  • High-power DC-DC conversion systems
  • Industrial motor drive freewheeling circuits
  • Battery charging infrastructure rectification

Procurement Notes

Verify the specific manufacturer designation upon procurement, as market listings may reference Navitas Semiconductor due to corporate acquisitions. Confirm that the received component matches the GeneSiC part number MBRTA80035 and adheres to the specified 35V/400A ratings. Request official datasheets to validate the three-tower package dimensions and electrical characteristics before integration into production designs.

Selection Notes

Select this component when designing systems requiring high surge current handling capabilities alongside low forward voltage drop characteristics. The 400 A continuous current rating makes it suitable for heavy-duty industrial loads. Ensure the application circuit provides adequate chassis mounting surfaces to dissipate heat effectively, leveraging the package's thermal performance for reliable operation under sustained high-load conditions.

Part Context

This component belongs to the MBRTA series of high-power Schottky diode arrays from GeneSiC Semiconductor. It is engineered for robust performance in power conversion modules where space efficiency and thermal conductivity are critical. The three-tower architecture allows for compact integration into large-scale power assemblies compared to discrete single-diode solutions.

Replacement Considerations

Cross-reference with other GeneSiC MBRTA series variants or equivalent high-current Schottky arrays from alternative manufacturers. Verify that any substitute maintains the 35 V reverse voltage rating and 400 A current capacity while matching the three-tower mechanical footprint for direct board compatibility.

MBRTA80035MBRTA80035

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