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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 40V 400A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io) (per Diode)：400A
- Voltage - Forward (Vf) (Max) @ If：600 mV @ 400 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 mA @ 40 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA80040RL is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor, now part of Navitas Semiconductor. It features an anti-parallel configuration with two diodes in a single package. The device is rated for a maximum repetitive reverse voltage of 40 V and supports a continuous forward current of 800 A per diode. It utilizes a Three Tower screw-mount package designed for high-current applications. Key electrical characteristics include a typical forward voltage drop of 880 mV at 300 A and a maximum reverse leakage current of 1 mA at the rated voltage. The junction temperature range extends from -55°C to +175°C.
Feature Summary
- Anti-parallel dual diode configuration within a single module
- High current handling capability up to 800 A per diode
- Low forward voltage drop for improved efficiency
- Robust Three Tower screw-mount packaging
Applications
- DC/DC converters
- Free-wheeling rectification in motor drives
- High-power industrial power supplies
Procurement Notes
Verify the manufacturer status as GeneSiC Semiconductor has been acquired by Navitas Semiconductor. Confirm the specific datasheet version and pinout compatibility before integration. Check for any end-of-life notifications or alternative part recommendations from the current manufacturer. Ensure the supplier provides authentic components with traceable documentation.
Selection Notes
Select this component for applications requiring high current density and low conduction losses. The anti-parallel design simplifies circuit layout for synchronous rectification or free-wheeling roles. Evaluate thermal management requirements based on the 880 mV forward voltage drop at full load. Ensure the mounting interface matches the Three Tower package specifications.
Part Context
This component belongs to the MBRT series of silicon power Schottky diode modules. The series is characterized by high current ratings and rugged packaging suitable for demanding power electronics environments. GeneSiC Semiconductor specialized in such devices before its acquisition by Navitas Semiconductor, which continues to support the product line.
FAQ
What is the diode configuration of the MBRTA80040RL?
It features an anti-parallel configuration containing two Schottky diodes in a single module.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175°C.
What is the package type?
It uses a Three Tower screw-mount package.
