MBRTA80045R

Overview

The MBRTA80045R is a silicon power Schottky rectifier module manufactured by GeneSiC Semiconductor. It features an anti-parallel diode configuration within a Twin Tower package, designed for high-current applications. Key electrical parameters include a repetitive reverse voltage of 45 V and a continuous forward current rating of 800 A. The device exhibits a maximum forward voltage drop of 1.1 V at rated current and supports a surge current of 2400 A. It operates reliably within a junction temperature range of -55°C to +175°C and utilizes screw mount installation.

Feature Summary

• Anti-parallel diode configuration integrated into a single module for efficient circuit design
• High thermal stability with a maximum operating junction temperature of +175°C
• Robust surge current capability suitable for demanding power conversion environments

Applications

• DC-DC converters in industrial power supplies
• Uninterruptible Power Supply (UPS) systems
• Solar string inverters and micro-inverters
• Battery charging equipment for electric vehicles

Procurement Notes

Verify the specific suffix 'R' against official GeneSiC documentation to confirm packaging or tape-and-reel specifications, as generic listings may not distinguish this variant. Confirm the manufacturer source, as GeneSiC assets are associated with Navitas Semiconductor. Ensure the procurement channel provides valid RoHS compliance data and authentic datasheets matching the MBRTA series specifications.

Selection Notes

Select the MBRTA80045R when designing circuits requiring high current handling up to 800 A with low forward voltage drop at 45 V reverse voltage. The Twin Tower package facilitates effective heat dissipation and board-level integration. Compare thermal resistance values against system cooling capabilities to ensure junction temperatures remain within the specified +175°C limit under continuous load conditions.

Part Context

This component belongs to the MBRTA series of silicon power Schottky rectifiers from GeneSiC Semiconductor. The series is characterized by high current density and robust packaging options like the Twin Tower form factor. These modules are engineered for high-efficiency power conversion, offering superior performance compared to standard fast recovery diodes in low-voltage, high-current applications.

Replacement Considerations

Cross-reference with other MBRTA series variants such as MBRTA60045R or MBRTA100045R if current ratings differ. Verify pinout compatibility and thermal interface requirements before substituting with equivalent modules from other manufacturers offering similar Twin Tower Schottky configurations.