MBT3904DW1T1

Overview

The MBT3904DW1T1G is a dual NPN bipolar junction transistor array manufactured by onsemi. It integrates two independent NPN transistors within a compact SC-88 (SOT-363) surface-mount package featuring six terminals. The device supports a maximum continuous collector current of 200 mA and offers a collector-emitter breakdown voltage of 40 V, with a collector-base voltage rating of 60 V. It exhibits a transition frequency of 300 MHz and maintains a low collector-emitter saturation voltage of 300 mV at specified currents. The component operates reliably across an extended temperature range from -55°C to +150°C junction temperature, with a total power dissipation limit of 150 mW.

Feature Summary

• Integrates two isolated NPN transistors in a single compact surface-mount package for space-constrained designs.
• Provides high-speed switching capability with a 300 MHz transition frequency suitable for general-purpose applications.
• Ensures robust thermal performance with a wide operating junction temperature range up to 150°C.

Applications

• General-purpose signal switching and amplification circuits
• Interface logic level translation between different voltage domains
• Driver stages for LEDs, relays, or small loads in consumer electronics

Procurement Notes

Verify the complete part number suffix, as 'MBT3904DW1T1' typically corresponds to the 'MBT3904DW1T1G' variant which indicates RoHS compliance. Confirm packaging options such as cut tape or reel quantities directly with authorized distributors. Ensure the procurement source provides valid traceability documentation and adheres to the manufacturer's material declaration standards.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal footprint compared to discrete single transistors. Compare the 150 mW power dissipation limit against thermal constraints in dense PCB layouts. Verify that the 40 V collector-emitter voltage rating exceeds the maximum circuit operating voltage to ensure reliable operation under transient conditions.

Part Context

This device belongs to the MBT3904 series of dual NPN transistors designed for low-power surface-mount applications. It serves as a compact alternative to using two separate MMBT3904 units, offering matched electrical characteristics within the same package. The SC-88 form factor facilitates automated assembly and reduces board space requirements in portable devices.

Replacement Considerations

The MBT3904DW1T3G is listed as an alias for this component. Verify pinout compatibility and electrical specifications before substituting with other dual NPN arrays from different manufacturers.

FAQ

What is the specific package type for the MBT3904DW1T1G?

The component is housed in a 6-terminal SC-88 package, also known as SOT-363 or SC70-6.

Is the internal transistor configuration common emitter or common base?

The transistors are internally isolated, allowing for independent connection in various configurations such as common emitter.

What is the maximum collector-base voltage rating?

The maximum collector-base voltage (VCBO) is rated at 60 V.