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The MBT3904DW1T1G is a dual NPN bipolar junction transistor array manufactured by onsemi. It integrates two independent NPN transistors within a compact SC-70 (SC-88/SOT-363) surface-mount package featuring six terminals. The device supports a maximum continuous collector current of 200 mA and offers a collector-emitter breakdown voltage of 40 V, with a collector-base voltage rating of 60 V. Key electrical characteristics include a transition frequency of 300 MHz and a power dissipation capacity of 150 mW. The component operates reliably across an extended temperature range from -55°C to +150°C.
Verify the specific suffix against official manufacturer documentation to confirm exact ordering specifications. Confirm that the requested part matches the standard MBT3904DW1T1G variant regarding pinout and electrical ratings. Ensure compliance with RoHS directives if required by the target application environment.
Select this component when space constraints necessitate a dual-transistor solution in a small outline package. Compare the 150 mW thermal limit against the expected power dissipation in the final design. Consider the 300 MHz transition frequency for high-speed digital or analog signal processing requirements.
This component belongs to the MBT3904 series of small-signal NPN transistors. It serves as a dual-channel alternative to single NPN packages like the MMBT3904WT1G. The device shares core electrical parameters with other members of the family while offering integrated dual functionality in the SC-70 form factor.
The MBT3904DW1T1G is functionally equivalent to the MBT3904DW1T3G. Both parts share identical electrical specifications and pin configurations, allowing for interchangeability in designs where packaging variations do not impact mechanical constraints.