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The MBT3904DW1T1G is a dual NPN bipolar junction transistor manufactured by onsemi. It integrates two independent NPN transistors within a single SC-70-6 (SOT-363) surface-mount package. The device supports a maximum continuous collector current of 200 mA and offers a collector-emitter breakdown voltage of 40 V, with a collector-base voltage rating of 60 V and an emitter-base voltage limit of 6 V. Electrical performance includes a transition frequency of 300 MHz and a minimum DC current gain of 40. Thermal specifications define a power dissipation capacity of 150 mW and an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and material declarations prior to integration. Cross-reference datasheet revisions to validate electrical parameters for the intended production environment.
Select this component when space-constrained designs require two matched NPN transistors. The SC-70-6 package facilitates automated surface-mount assembly. Confirm that the 150 mW power dissipation limit accommodates the thermal profile of the final application without requiring additional heatsinking.
This part belongs to the MBT3904DW1 series of dual general-purpose NPN transistors. It serves as a compact alternative to discrete single-transistor solutions, reducing board area while maintaining standard switching characteristics compatible with common logic families.
MBT3904DW1T3G is a confirmed substitute offering identical electrical specifications and pinout compatibility.