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The MBT3904DW1T1H is a dual NPN bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SC-88 surface-mount package. The device supports a maximum DC collector current of 200 mA and operates with a collector-emitter voltage of 40 V. Key electrical parameters include a collector-base voltage of 60 V, an emitter-base voltage of 6 V, and a power dissipation rating of 150 mW. The component features a transition frequency of 300 MHz and maintains a collector-emitter saturation voltage of 300 mV. It functions within a temperature range from -55°C to +150°C.
Verify the specific suffix 'H' against official manufacturer documentation to confirm compliance and availability status. Distributor listings may reference similar variants like 'G'; ensure the exact part number matches design requirements before procurement. Confirm RoHS compliance details directly from the datasheet.
Select this component when a dual NPN BJT is required in an SC-88 package. Ensure the 200 mA current limit and 40 V voltage rating align with the application's electrical demands. Compare the 300 MHz frequency response against alternative single-transistor packages if space constraints allow.
This component belongs to the MBT3904 series of general-purpose NPN transistors. It shares core electrical characteristics with variants such as MBT3904DW1T1G but differs in packaging or manufacturing lot specifications indicated by the suffix. It serves as a standard discrete solution for low-power switching tasks.
MBT3904DW1T1G is a documented equivalent variant with identical electrical specifications.