MBT6429DW1T1

Overview

The MBT6429DW1T1G is a dual NPN bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SC-70-6 surface-mount package. The device supports a maximum continuous collector current of 200 mA. Key voltage ratings include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 55 V, and an emitter-base voltage (VEBO) of 6 V. Electrical performance specifications feature a DC current gain (hFE) minimum of 500, a collector-emitter saturation voltage of 600 mV, and a transition frequency (fT) of 700 MHz. Thermal characteristics specify a power dissipation of 150 mW and an operating temperature range from -55°C to +150°C.

Feature Summary

• Dual NPN configuration within a compact SC-70-6 package for space-constrained designs
• High DC current gain with a minimum specification of 500 at low currents
• Wide thermal operating range extending up to +150°C junction temperature

Applications

• General-purpose signal amplification circuits
• Switching applications requiring high gain and moderate speed
• Low-power consumer electronics requiring small form factor components

Procurement Notes

Verify the complete part number includes the suffix 'G' for lead-free compliance when sourcing. Confirm the manufacturer is onsemi, as distributors may list variations. Ensure the SC-70-6 package matches the design footprint requirements. Check datasheet revisions for any updates to electrical limits or testing conditions before finalizing component selection.

Selection Notes

Select this component for applications requiring dual NPN transistors in a minimal footprint. The 700 MHz transition frequency supports moderate-speed switching. Compare the 600 mV saturation voltage against single-transistor alternatives if lower voltage drop is critical. Verify that the 150 mW power dissipation limit accommodates the thermal environment of the target assembly without excessive derating.

Part Context

This device belongs to the MBT6429DW1 series of dual NPN transistors. It shares similar electrical characteristics with the MMBT6429LT1G but differs in packaging, utilizing SC-70-6 instead of SOT-23. The series is designed for general-purpose use in portable and industrial electronics where board space is limited.

Replacement Considerations

The NSVMMBT6429LT1G offers comparable electrical performance but uses an SOT-23-3 package, requiring PCB layout adjustments. The MMBT6429LT1G is another alternative with identical electrical specs but different packaging. Verify pinout compatibility and thermal resistance differences when substituting.