MCAC6D5N10YL-TP

$1.30

Description：N-CHANNEL MOSFET,DFN5060
Series：-
Mfr：MCC (Micro Commercial Components)
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cab300ac6a3a Category: Single FETs, MOSFETs Brand: MCC (Micro Commercial Components)

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

MCAC6D5N10YL-TP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is N-CHANNEL MOSFET,DFN5060. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for MCAC6D5N10YL-TP

Description：N-CHANNEL MOSFET,DFN5060
Series：-
Mfr：MCC (Micro Commercial Components)
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2870 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：104W (Tj)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN5060
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for MCAC6D5N10YL-TP

MCAC6D5N10YL-TP

Single FETs, MOSFETs Overview

The MCAC6D5N10YL-TP is a silicon N-channel enhancement mode MOSFET manufactured by Micro Commercial Components. It utilizes a DFN5060-8 surface-mount package and operates with a drain-source voltage of 100 V. The device supports a continuous drain current of 74 A at 25°C and maintains a maximum on-resistance of 6.5 mΩ at 10 V gate drive. Key electrical characteristics include a gate charge of 45 nC, threshold voltage of 2.5 V, and power dissipation of 104 W. It functions within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

Utilizes split-gate trench technology for optimized switching performance and low on-resistance.
Features an enhanced body diode for improved reverse recovery characteristics in synchronous rectification applications.
Designed with lead-free tin plating on the terminals for reliable soldering and environmental compliance.

Single FETs, MOSFETs Applications

DC-DC converter output stages
Synchronous rectification circuits
Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm terminal finish and packaging configuration. Ensure that the requested part number matches the exact electrical specifications required for the target application circuit. Cross-reference the component marking with the datasheet documentation to prevent counterfeit substitution during procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-channel MOSFET with 100 V rating and high current capability is required in a compact DFN5060 footprint. Consider the thermal resistance and power dissipation limits relative to the PCB copper area available for heat sinking. Evaluate the gate charge requirements against the driving circuit capabilities to ensure efficient switching transitions.

Single FETs, MOSFETs Part Context

This component belongs to the MCC power MOSFET portfolio designed for general-purpose power switching. It represents a silicon-based solution offering a balance between conduction losses and switching speed. The DFN5060 package provides a small form factor suitable for space-constrained electronic designs requiring robust current handling.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on pinout or voltage ratings without verifying on-resistance and thermal parameters.