FET, MOSFET Arrays MCACD011N06YL-TP product image

MCACD011N06YL-TP

$0.28
  • Description:DUAL N-CHANNEL MOSFET,PDFN5060-8
  • Series:-

SKU:cc58834d471c Category: Brand:

  
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MCACD011N06YL-TP is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is DUAL N-CHANNEL MOSFET,PDFN5060-8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCACD011N06YL-TP

  • Description:DUAL N-CHANNEL MOSFET,PDFN5060-8
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:48A (Tc)
  • Rds On (Max) @ Id, Vgs:11mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:880pF @ 30V
  • Power - Max:44W (Tj)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerLDFN
  • Supplier Device Package:PDFN5060-8D
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MCACD011N06YL-TP

MCACD011N06YL-TP

FET, MOSFET Arrays Overview

The MCACD011N06YL-TP is an N-channel MOSFET manufactured by Micro Commercial Components. It utilizes a Split Gate Trench technology and is housed in a PDFN5060-8D surface-mount package. The device features a drain-source breakdown voltage of 60V and a continuous drain current rating of 110A at case temperature. Its maximum on-resistance is specified as 1.1 milliohms at a gate-source voltage of 10V. The component supports a junction temperature range from -55°C to +175°C and carries AEC-Q101 automotive qualification.

FET, MOSFET Arrays Feature Summary

  • Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
  • Split Gate Trench technology design optimized for low conduction losses and efficient switching characteristics.
  • High current handling capability enabled by advanced silicon process technology within a compact surface-mount footprint.

FET, MOSFET Arrays Applications

  • Automotive power distribution systems
  • DC-DC converter circuits
  • Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm exact electrical parameters and packaging details. Ensure compatibility with required automotive standards and thermal management solutions during integration. Cross-reference official datasheets for precise mechanical dimensions and handling instructions.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high current density and low on-resistance in automotive or industrial power applications. Evaluate thermal dissipation requirements based on the specified power dissipation limits and operating temperature range. Confirm that the gate charge characteristics align with the driving circuit capabilities for optimal switching performance.

FET, MOSFET Arrays Part Context

This part belongs to the MCC N-channel MOSFET family, specifically designed for high-efficiency power switching. The PDFN5060-8D package provides enhanced thermal performance compared to traditional packages. It serves as a solution for applications needing reliable semiconductor switches with stringent automotive quality requirements.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.

FET, MOSFET Arrays FAQ

What is the maximum drain-source voltage for this MOSFET?

The maximum drain-source breakdown voltage (Vdss) is 60V.

Is this component qualified for automotive applications?

Yes, the MCACD011N06YL-TP is AEC-Q101 qualified for automotive use.

What is the typical on-resistance value?

The maximum on-resistance (Rds(on)) is 1.1 milliohms at a gate-source voltage of 10V.

MCACD011N06YL-TPMCACD011N06YL-TP
$0.28
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