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MCACD50N04YHE3-TP is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET 2N-CH 40V 50A 8PDFN. Review the specifications below when checking this part for your BOM.
The MCACD50N04YHE3-TP is a dual N-channel MOSFET from Micro Commercial Components, housed in an 8-terminal PDFN5060 package. It features AEC-Q101 qualification and split gate trench technology for low on-resistance. Key electrical parameters include a drain-source voltage of 40V, continuous drain current of 32A at 25°C case temperature, and a maximum on-resistance of 5.1mΩ at VGS=10V. The device supports a junction temperature range of -55°C to +150°C with a thermal resistance of 3°C/W junction-to-case.
Verify component authenticity by checking for authorized distributor status or direct MCC purchase, as counterfeiting risks exist. Confirm the specific tape-and-reel packaging quantity matches project requirements. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage during soldering processes.
Select this component when a dual-switch solution is required in a small footprint. The 40V rating suits low-voltage automotive and industrial applications. Evaluate thermal management needs based on the 3°C/W junction-to-case resistance. Verify that the 32A continuous current rating aligns with peak load demands in the target circuit design.
This part belongs to the MCACD series of dual MOSFETs manufactured by Micro Commercial Components. It utilizes the PDFN5060-8D package to provide two independent N-channel devices in one unit. The series targets automotive and industrial markets needing space-efficient switching solutions with robust thermal characteristics.
Consult official datasheets for pin-compatible alternatives from other manufacturers. Verify that substitute parts meet the same AEC-Q101 qualification standards. Ensure replacement components match the 40V breakdown voltage and similar on-resistance specifications to maintain circuit performance.
The maximum operating junction temperature is +150°C.
Yes, it supports a single pulsed avalanche energy of 81 mJ under specified test conditions.
The typical reverse recovery time (trr) is 58 ns.
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