FET, MOSFET Arrays MCACD50N04YHE3-TP product image

MCACD50N04YHE3-TP

$0.54
  • Description:MOSFET 2N-CH 40V 50A 8PDFN
  • Series:-

SKU:f62f47e87fff Category: Brand:

  
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MCACD50N04YHE3-TP is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET 2N-CH 40V 50A 8PDFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCACD50N04YHE3-TP

  • Description:MOSFET 2N-CH 40V 50A 8PDFN
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:50A (Tc)
  • Rds On (Max) @ Id, Vgs:5.1mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1392pF @ 25V
  • Power - Max:42W (Tj)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerLDFN
  • Supplier Device Package:PDFN5060-8D
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for MCACD50N04YHE3-TP

MCACD50N04YHE3-TP

FET, MOSFET Arrays Overview

The MCACD50N04YHE3-TP is a dual N-channel MOSFET from Micro Commercial Components, housed in an 8-terminal PDFN5060 package. It features AEC-Q101 qualification and split gate trench technology for low on-resistance. Key electrical parameters include a drain-source voltage of 40V, continuous drain current of 32A at 25°C case temperature, and a maximum on-resistance of 5.1mΩ at VGS=10V. The device supports a junction temperature range of -55°C to +150°C with a thermal resistance of 3°C/W junction-to-case.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration within a single compact surface-mount package
  • Split gate trench MOSFET technology designed for high-density cell performance
  • Automotive-grade reliability certified under the AEC-Q101 standard
  • Halogen-free construction with epoxy meeting UL 94 V-0 flammability ratings

FET, MOSFET Arrays Applications

  • Automotive power distribution systems requiring dual-channel control
  • Low-voltage synchronous rectification circuits
  • High-efficiency DC-DC converter topologies
  • Motor driver bridge configurations

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking for authorized distributor status or direct MCC purchase, as counterfeiting risks exist. Confirm the specific tape-and-reel packaging quantity matches project requirements. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage during soldering processes.

FET, MOSFET Arrays Selection Notes

Select this component when a dual-switch solution is required in a small footprint. The 40V rating suits low-voltage automotive and industrial applications. Evaluate thermal management needs based on the 3°C/W junction-to-case resistance. Verify that the 32A continuous current rating aligns with peak load demands in the target circuit design.

FET, MOSFET Arrays Part Context

This part belongs to the MCACD series of dual MOSFETs manufactured by Micro Commercial Components. It utilizes the PDFN5060-8D package to provide two independent N-channel devices in one unit. The series targets automotive and industrial markets needing space-efficient switching solutions with robust thermal characteristics.

FET, MOSFET Arrays Replacement Considerations

Consult official datasheets for pin-compatible alternatives from other manufacturers. Verify that substitute parts meet the same AEC-Q101 qualification standards. Ensure replacement components match the 40V breakdown voltage and similar on-resistance specifications to maintain circuit performance.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Does this component support pulsed avalanche energy?

Yes, it supports a single pulsed avalanche energy of 81 mJ under specified test conditions.

What is the body diode reverse recovery time?

The typical reverse recovery time (trr) is 58 ns.

MCACD50N04YHE3-TPMCACD50N04YHE3-TP
$0.54
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