FET, MOSFET Arrays MCGD10NP03-TP product image

MCGD10NP03-TP

$0.12
  • Description:MOSFET N/P-CH 30V 10A DFN
  • Series:-

SKU:bf0156eac662 Category: Brand:

  
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MCGD10NP03-TP is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET N/P-CH 30V 10A DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCGD10NP03-TP

  • Description:MOSFET N/P-CH 30V 10A DFN
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:10A (Tc)
  • Rds On (Max) @ Id, Vgs:17mOhm @ 10A, 10V, 40mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V, 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:873pF @ 15V, 888pF @ 15V
  • Power - Max:21W (Tj)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:DFN3333-D
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MCGD10NP03-TP

MCGD10NP03-TP

FET, MOSFET Arrays Overview

The MCGD10NP03-TP is a dual N/P-channel MOSFET in a DFN3333-D package. It utilizes Trench LV technology and operates within a junction temperature range of -55°C to +150°C. The N-channel section provides a drain-source voltage of 30V, continuous current of 10A, and on-resistance of 17mΩ at VGS=10V. The P-channel section offers 30V drain-source voltage, 10A continuous current, and 40mΩ on-resistance at VGS=-10V. Total power dissipation is 21W.

FET, MOSFET Arrays Feature Summary

  • Dual N/P-channel configuration in a compact DFN3333-D package
  • Trench LV MOSFET technology for low on-resistance
  • Halogen-free "Green" device with UL 94 V-0 flammability rating
  • Moisture sensitivity level 3 compliance

FET, MOSFET Arrays Applications

  • Power management circuits requiring complementary switching
  • Low voltage DC-DC converter topologies
  • Battery protection and load switch applications

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code against official datasheet specifications. Ensure the ordering suffix matches the required tape and reel packaging format. Confirm RoHS compliance status through authorized MCC distributors or direct procurement channels to guarantee genuine parts.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring integrated N and P-channel switching in a small footprint. Evaluate thermal performance based on the specified junction-to-ambient resistance. Consider the gate threshold voltage characteristics for compatibility with standard logic levels in low-voltage control environments.

FET, MOSFET Arrays Part Context

This part belongs to the Micro Commercial Components (MCC) MOSFET product line. It is designed for surface-mount assembly using the DFN3333-D package. The device integrates both N-channel and P-channel fields within a single encapsulation to save board space.

FET, MOSFET Arrays Replacement Considerations

Consult official MCC documentation for verified substitute part numbers. Cross-reference pinout configurations and electrical ratings before implementation.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Does the device meet halogen-free requirements?

Yes, it is defined as a Halogen-free "Green" device containing less than 900ppm bromine and chlorine combined.

What is the package type?

The component uses the DFN3333-D package.

MCGD10NP03-TPMCGD10NP03-TP
$0.12
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