MCGWF011N10YLHE3-TP

Single FETs, MOSFETs Overview

The MCGWF011N10YLHE3-TP is an N-channel power MOSFET manufactured by Micro Commercial Components (MCC). It utilizes split gate trench technology and is available in automotive grade. The device features a drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 65 A at case temperature. The on-resistance (Rds(on)) is 11 mΩ at 10 A and 10 V gate drive. It operates within a junction temperature range of -55°C to +175°C, with a maximum power dissipation of 100 W.

Single FETs, MOSFETs Feature Summary

• Utilizes split gate trench power MOSFET technology for enhanced switching performance.
• Automotive grade qualification ensures reliability in demanding environments.
• Low on-resistance design supports high efficiency in power applications.

Single FETs, MOSFETs Applications

• Automotive power management systems
• High-efficiency DC-DC converters
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the official MCC datasheet before procurement. Confirm that the component meets the required automotive grade specifications for your application. Ensure compatibility with surface mount assembly processes for the DFN3333-8(SWF) package. Cross-reference part numbers with authorized distributors to avoid counterfeit components.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V N-channel MOSFET with low Rds(on) is required for automotive or industrial use. The DFN3333-8(SWF) package offers a compact footprint suitable for space-constrained designs. Consider the 65 A current rating and 100 W power dissipation capabilities for thermal management planning. Verify gate threshold voltage requirements match the driving circuit logic levels.

Single FETs, MOSFETs Part Context

This part belongs to the MCGWF series from Micro Commercial Components, which focuses on low Rds(on) N-channel MOSFETs. The series employs split gate trench technology to achieve superior performance compared to standard planar devices. The 'HE3' suffix typically indicates RoHS compliance and halogen-free construction, aligning with environmental standards for modern electronics manufacturing.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 100 V, 65 A, 11 mΩ specifications and DFN3333-8(SWF) package. Verify pinout compatibility and thermal characteristics. Consult MCC documentation for recommended alternatives within the same product family or comparable industry parts with identical electrical parameters.

Single FETs, MOSFETs FAQ

What technology does the MCGWF011N10YLHE3-TP use?

It uses split gate trench power MOSFET technology.

Is this component qualified for automotive applications?

Yes, it is available in automotive grade.