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Product Detailed Parameters
- Description：PNP/NPN EPITAXIAL PLANAR SILICON
- Series：*
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MCH3431-TL-E is a P-channel enhancement-mode MOSFET manufactured by onsemi, designed for surface-mount applications. It features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 2 A at 25°C. The device exhibits a maximum on-resistance of 0.215 Ω when measured at a gate-source voltage of 1 V and a drain current of 1 A. With a gate-source threshold voltage of 1.3 V at 1 mA, it is optimized for low-voltage drive circuits. The component operates within a temperature range from -55°C to +150°C and dissipates up to 900 mW of power.
Feature Summary
- P-channel configuration suitable for high-side switching applications
- Low on-resistance optimized for 1V gate drive conditions
- Extended thermal operating range up to 150°C junction temperature
Applications
- Low-voltage load switching circuits
- Power management modules requiring compact SMD packaging
- Battery protection and control systems
Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure that the procurement channel provides valid traceability records. Confirm RoHS compliance status directly with the manufacturer's latest declarations before integration into regulated assemblies.
Selection Notes
Select this component where a P-channel MOSFET with 30V rating and 2A current capacity is required in a small outline package. Evaluate the 0.215Ω Rds(on) at 1V Vgs to ensure compatibility with available logic-level drivers. Consider the 900mW power dissipation limit relative to the PCB copper area and ambient thermal conditions during design.
Part Context
This part belongs to onsemi's MCPH or similar small-outline transistor series, utilizing a three-terminal surface-mount footprint. It serves as a discrete power switch alternative to integrated solutions, offering flexibility in custom power stage designs where standard packages provide sufficient current handling for portable electronics.
Replacement Considerations
Direct substitutes must match the 30V P-channel specification, 2A current rating, and compatible pinout. Verify that any replacement maintains the same or lower Rds(on) at 1V Vgs to preserve drive efficiency. Check for identical thermal characteristics and package dimensions to ensure mechanical fit.
