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MCH6630-TL-E-ON is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MCH6630-TL-E-ON
- Description：MOSFET N-CH
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MCH6630-TL-E-ON
FET, MOSFET Arrays Overview
The MCH6630-TL-E-ON is an N-channel MOSFET array manufactured by onsemi. It integrates two independent N-channel enhancement-mode field-effect transistors within a single MCPH-6 surface-mount package. The device is designed for low-voltage switching applications, featuring a drain-source breakdown voltage of 50 V and a continuous drain current rating of 250 mA. Key electrical characteristics include a maximum gate-source voltage of 10 V and a typical on-resistance of 7.8 ohms at room temperature. The component supports a junction temperature range from -55°C to +150°C with a power dissipation capacity of 800 mW.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration providing two independent switching channels in a compact footprint
- Enhancement-mode operation suitable for logic-level control signals
- Robust thermal performance supporting high junction temperatures up to 150°C
FET, MOSFET Arrays Applications
- Low-voltage signal switching circuits
- Battery protection modules
- Small-signal amplification stages
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix and manufacturer part number against official onsemi documentation to ensure compatibility with design requirements. Confirm RoHS compliance status and moisture sensitivity level prior to integration. Check for any product discontinuance notifications or lifecycle changes directly from the manufacturer before finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring dual N-channel isolation in a minimal SMD footprint. Ensure the application voltage does not exceed the 50 V drain-source limit and that current demands remain within the 250 mA continuous rating. Consider the 7.8 ohm on-resistance impact on power loss during conduction phases when evaluating thermal management needs.
FET, MOSFET Arrays Part Context
This device belongs to the MCH series of integrated transistor arrays produced by onsemi. These components are engineered to replace multiple discrete transistors, thereby reducing board space and assembly complexity. The MCPH-6 package offers a standardized interface for automated pick-and-place manufacturing processes.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the N-channel polarity, 50 V rating, and MCPH-6 package dimensions.
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