MCH6660-TL-H

FET, MOSFET Arrays Overview

The MCH6660-TL-H is a complementary dual N/P-channel Power MOSFET from onsemi, housed in a 6-pin MCPH package. It features a maximum drain-source breakdown voltage of 20 V for both channels. The N-channel continuous drain current is rated at 2 A, while the P-channel is rated at 1.5 A. Typical on-resistance values are 105 mΩ for the N-channel and 205 mΩ for the P-channel. The device supports 1.8 V gate drive and includes ESD diode protection on the gates.

FET, MOSFET Arrays Feature Summary

• Complementary dual configuration integrating N-channel and P-channel MOSFETs in a single compact package
• Capable of operation with low-voltage logic signals via 1.8 V gate drive support
• Integrated electrostatic discharge (ESD) protection on gate terminals to enhance reliability

FET, MOSFET Arrays Applications

• General-purpose switching device applications
• Low-voltage power management circuits
• Battery-powered portable electronics

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required tape-and-reel packaging format. Check for RoHS compliance status and ensure the part meets current environmental regulations. Validate that the received units correspond to the active revision specified in the official datasheet documentation.

FET, MOSFET Arrays Selection Notes

Select this component when a small form factor complementary pair is required for low-voltage switching tasks. The 20 V rating suits systems operating within standard low-voltage rails. Consider the 1.8 V drive capability if interfacing with modern low-power microcontrollers. Evaluate thermal performance based on the MCPH package limitations for the intended current load.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's lineup of discrete power transistors designed for space-constrained applications. The MCPH package provides a compact solution compared to traditional leaded packages. It serves as a building block for power stages requiring both high-side and low-side switching capabilities in a minimal footprint.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure replacement parts maintain identical pinout configurations and electrical ratings. Verify that alternative components support the same 1.8 V drive requirements and package dimensions for direct board compatibility.