MCQD08N03B-TP

FET, MOSFET Arrays Overview

The MCQD08N03B-TP is a dual N-channel MOSFET manufactured by Micro Commercial Components (MCC). It utilizes Trench Power LV MOSFET technology and features a high-density cell design for low on-resistance. The device is housed in an SOP-8 surface-mount package. Key electrical parameters include a drain-source voltage of 30 V, a continuous drain current of 8 A at 25°C, and a maximum drain-source on-resistance of 25 mΩ at VGS=10V. Total power dissipation is rated at 1.6 W with a thermal resistance of 80°C/W junction to ambient. The operating junction temperature range spans from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Trench Power LV MOSFET Technology
• High Density Cell Design For Low RDS(on)
• Moisture Sensitivity Level 3
• Halogen Free Green Device

FET, MOSFET Arrays Applications

• Power management circuits
• DC-DC converters
• Motor control applications
• Load switching

FET, MOSFET Arrays Procurement Notes

Verify the authenticity of the component through authorized MCC distributors or direct procurement channels to avoid counterfeit parts. Confirm that the ordering suffix indicates RoHS compliance. Ensure storage conditions adhere to Moisture Sensitivity Level 3 requirements to maintain device integrity prior to assembly.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel configurations in compact SOP-8 packages. Consider the 30 V breakdown voltage and 8 A current rating for low-voltage power switching tasks. Evaluate the thermal performance based on the 80°C/W junction-to-ambient resistance and the 1.6 W power dissipation limit under specified mounting conditions.

FET, MOSFET Arrays Part Context

This part belongs to the MCQD08 series of dual MOSFETs produced by Micro Commercial Components. It is designed as a silicon-based enhancement mode device suitable for surface mount technology. The product line emphasizes low on-resistance and high density cell designs for efficient power handling in small form factors.

FET, MOSFET Arrays Replacement Considerations

Consult official MCC documentation for verified substitute part numbers within the same series or equivalent specifications. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical ratings, and package dimensions against the datasheet.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is ±12 V.

Is the device compliant with RoHS standards?

Yes, the 'P' suffix designates RoHS compliance, and the finish is lead-free.

What is the single pulsed avalanche energy rating?

The single pulsed avalanche energy is rated at 16 mJ under specific test conditions.