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MCR12DCMT4
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Product Detailed Parameters
- Description：THYRISTOR SCR 12A 600V DPAK
- Series：-
- Mfr：onsemi
- Package：Cut Tape (CT)
- Voltage - Off State：600 V
- Voltage - Gate Trigger (Vgt) (Max)：1 V
- Current - Gate Trigger (Igt) (Max)：20 mA
- Current - Hold (Ih) (Max)：40 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm)：100A @ 60Hz
- SCR Type：Standard Recovery
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Voltage - On State (Vtm) (Max)：-
- Current - On State (It (AV)) (Max)：7.8 A
- Current - On State (It (RMS)) (Max)：12:00 AM
- Current - Off State (Max)：-
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Overview
The MCR12DCMT4 is a reverse blocking thyristor (SCR) from onsemi, packaged in a DPAK (CASE 369C). It supports a peak repetitive off-state voltage of 600 V and an RMS on-state current of 12 A. The device features a low gate trigger current of 20 mA maximum at 25°C and a holding current of 40 mA maximum. It operates within a junction temperature range of -40°C to 125°C and offers a thermal resistance of 2.2°C/W from junction to case.
Feature Summary
- Passivated die construction ensures reliability and parameter uniformity across operating conditions.
- Low level triggering and holding characteristics facilitate efficient control circuitry design.
- Epoxy formulation meets UL 94 V-0 flammability standards for enhanced safety compliance.
Applications
- Motor control systems
- Process control applications
- Temperature regulation circuits
- Light and speed control mechanisms
Procurement Notes
Verify the specific ordering suffix to confirm package type and environmental compliance. The 'T4' suffix indicates tape and reel packaging with a quantity of 2500 units. The 'G' suffix denotes a lead-free package variant. Ensure the selected part matches the required voltage rating and thermal management specifications for the target application environment.
Selection Notes
Select this component for high-volume industrial and consumer applications requiring robust reverse blocking capabilities. Evaluate the thermal resistance and power dissipation limits against the expected load currents. Consider the low gate trigger requirements for compatibility with standard logic or driver interfaces. Confirm that the 600 V rating aligns with the system's peak voltage stresses.
Part Context
This device belongs to the MCR12DCM/N series of silicon controlled rectifiers designed for cost-effective solid-state switching. It serves as a direct replacement for legacy Motorola SCR designs in similar form factors. The DPAK package provides a compact solution for surface mount assembly while maintaining adequate heat dissipation for moderate power levels.
Replacement Considerations
Direct substitutes include the MCR12DCN for higher voltage ratings (800 V) and the MCR12DCNT4 for identical electrical specifications in tape and reel packaging. Verify pinout compatibility and thermal performance when cross-referencing with other manufacturers' equivalent SCRs.
FAQ
What is the maximum continuous DC gate trigger current specified for the MCR12DCMT4?
The maximum continuous DC gate trigger current is 20 mA at a junction temperature of 25°C, increasing to 40 mA at -40°C.
Does the MCR12DCMT4 support reverse blocking operation?
Yes, it is explicitly designed as a reverse blocking thyristor capable of withstanding a peak repetitive reverse voltage of 600 V.
What is the critical rate of rise of off-state voltage (dv/dt) for this device?
The typical critical rate of rise of off-state voltage is 200 V/µs at a junction temperature of 125°C with the gate open.
