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MCR12DCNT4
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Product Detailed Parameters
- Description：SCR 800V 12A DPAK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Voltage - Off State：800 V
- Voltage - Gate Trigger (Vgt) (Max)：1 V
- Current - Gate Trigger (Igt) (Max)：20 mA
- Current - Hold (Ih) (Max)：40 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm)：100A @ 60Hz
- SCR Type：Standard Recovery
- Operating Temperature：-40°C ~ 125°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Voltage - On State (Vtm) (Max)：1.9 V
- Current - On State (It (AV)) (Max)：7.8 A
- Current - On State (It (RMS)) (Max)：12:00 AM
- Current - Off State (Max)：10 µA
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Overview
The MCR12DCNT4G is a Silicon Controlled Rectifier (SCR) reverse blocking thyristor in a DPAK package. It supports an RMS on-state current of 12 A and average on-state current of 7.8 A at a case temperature of 90°C. The device offers peak repetitive off-state voltages of 600 V for the M variant and 800 V for the N variant. It features a peak non-repetitive surge current capability of 100 A and operates within a junction temperature range of -40°C to 125°C.
Feature Summary
- Passivated die construction ensures reliability and parameter uniformity across operating conditions.
- Low level triggering and holding characteristics facilitate efficient gate drive requirements.
- Epoxy material meets UL 94 V-0 flammability standards for enhanced safety compliance.
Applications
- Motor control circuits
- Process control systems
- Temperature regulation devices
- Light dimming applications
- Speed control mechanisms
Procurement Notes
Verify the specific voltage rating suffix required for your application, as the M variant supports 600 V and the N variant supports 800 V. Confirm that the DPAK surface-mount package aligns with your PCB layout constraints. Ensure thermal management strategies account for the specified junction-to-case thermal resistance to maintain safe operating temperatures during high-current conduction periods.
Selection Notes
Select this component when high-volume industrial or consumer applications require robust SCR performance in a compact surface-mount form factor. Consider the 12 A RMS current capacity and low gate trigger requirements for efficient power switching. Evaluate the thermal dissipation needs against the available board space and cooling capabilities to ensure the device remains within its maximum junction temperature limits during continuous operation.
Part Context
This device belongs to the MCR12DC series of reverse blocking thyristors designed for cost-effective, high-volume manufacturing. It shares the same physical footprint and electrical architecture as the MCR12DCM variant, differing primarily in the maximum repetitive off-state voltage rating. The series is optimized for general-purpose AC control tasks where reliable solid-state switching is essential.
Replacement Considerations
The MCR12DCMT4 serves as the direct equivalent for the 600 V rated version of this component family.
FAQ
What is the difference between the MCR12DCM and MCR12DCN variants?
The primary distinction lies in the peak repetitive off-state voltage rating; the MCR12DCM supports 600 V, while the MCR12DCN supports 800 V. Both share identical current ratings and package dimensions.
How does junction temperature affect the gate trigger current?
As the junction temperature increases from -40°C to 125°C, the typical gate trigger current decreases significantly, allowing for easier triggering at higher operating temperatures.
