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MCR716T4
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Product Detailed Parameters
- Description：THYRISTOR SCR 4A 400V DPAK
- Series：-
- Mfr：onsemi
- Package：Cut Tape (CT)
- Voltage - Off State：400 V
- Voltage - Gate Trigger (Vgt) (Max)：800 mV
- Current - Gate Trigger (Igt) (Max)：75 µA
- Current - Hold (Ih) (Max)：5 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm)：25A @ 60Hz
- SCR Type：Sensitive Gate
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Voltage - On State (Vtm) (Max)：-
- Current - On State (It (AV)) (Max)：2.6 A
- Current - On State (It (RMS)) (Max)：4:00 AM
- Current - Off State (Max)：-
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Overview
The MCR716T4 is a sensitive gate silicon controlled rectifier (SCR) manufactured by onsemi, designed for high-volume industrial and consumer applications. It features a peak repetitive off-state voltage of 400 V and an on-state RMS current rating of 4.0 A at a case temperature of 90°C. The device operates within a junction temperature range of -40°C to +110°C and utilizes a DPAK surface mount package (Case 369C). Key electrical characteristics include a maximum holding current of 5 mA and a typical gate trigger current of 25 µA.
Feature Summary
- Sensitive gate architecture enabling low-level triggering with minimal gate power requirements.
- Passivated die construction ensuring reliability and uniformity under varying conditions.
- Surface mount lead form compatible with automated assembly processes.
Applications
- Motor control systems
- Process control circuits
- Temperature regulation devices
- Light dimming controls
- Speed control mechanisms
Procurement Notes
Verify the specific ordering suffix to confirm package type and environmental compliance. The standard T4 designation indicates tape and reel packaging. Ensure the selected variant matches the required voltage rating, as the MCR718 offers 600 V blocking capability. Confirm RoHS status if lead-free composition is mandatory for the assembly process.
Selection Notes
Select this component for applications requiring compact surface mount thyristors with moderate current handling capabilities. The sensitive gate feature simplifies drive circuit design by reducing the necessary gate trigger current. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and ambient operating conditions.
Part Context
This device belongs to the MCR71x series of reverse blocking thyristors from onsemi. The series includes variants with different voltage ratings, such as the MCR718 rated for 600 V. These components are engineered for cost-effective solutions in general-purpose switching applications where small physical footprint is advantageous.
Replacement Considerations
The MCR718T4 serves as a higher voltage alternative within the same series, offering 600 V blocking capability while maintaining identical current ratings and package dimensions. Verify pinout compatibility when substituting between these variants.
FAQ
What is the maximum non-repetitive surge current rating?
The peak non-repetitive surge current (ITSM) is rated at 25 A for a half-cycle sine wave at 60 Hz with a junction temperature of 110°C.
How does the holding current vary with temperature?
The holding current increases with rising junction temperature, reaching a maximum of 10 mA at -40°C and typically remaining below 5 mA at 25°C.
What is the critical rate of rise of off-state voltage?
The device has a critical rate of rise of off-state voltage (dv/dt) of 10 V/µs at a junction temperature of 110°C with a resistive gate circuit.
