Transistor, Photovoltaic Output Optoisolators MCT5211 product image

MCT5211

  • Description:OPTOISO 5.3KV TRANS W/BASE 6-DIP
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:170174c116cf Category: Brand:

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MCT5211 is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists onsemi. Its product description is OPTOISO 5.3KV TRANS W/BASE 6-DIP. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for MCT5211

  • Description:OPTOISO 5.3KV TRANS W/BASE 6-DIP
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Number of Channels:1
  • Voltage - Isolation:5300Vrms
  • Current Transfer Ratio (Min):150% @ 1.6mA
  • Current Transfer Ratio (Max):-
  • Turn On / Turn Off Time (Typ):14µs, 2.5µs
  • Rise / Fall Time (Typ):-
  • Input Type:DC
  • Output Type:Transistor with Base
  • Voltage - Output (Max):30V
  • Current - Output / Channel:150mA
  • Voltage - Forward (Vf) (Typ):1.25V
  • Current - DC Forward (If) (Max):50 mA
  • Vce Saturation (Max):400mV
  • Operating Temperature:-55°C ~ 100°C
  • Mounting Type:Through Hole
  • Package / Case:6-DIP (0.300", 7.62mm)
  • Supplier Device Package:6-DIP

Transistor, Photovoltaic Output Optoisolators datasheet and documents for MCT5211

MCT5211

Transistor, Photovoltaic Output Optoisolators Overview

The MCT5211 is a single-channel transistor output optocoupler manufactured by onsemi. It features an NPN phototransistor with a base terminal for improved switching performance. The device provides high isolation voltage of 5300 Vrms and supports a maximum collector-emitter voltage of 30V. It operates within a temperature range of -55°C to 100°C. Key electrical parameters include a minimum current transfer ratio of 150% at 1.6mA input, a maximum forward current of 50mA, and a typical turn-on/turn-off time of 14µs/2.5µs. The component is housed in a 6-DIP package.

Transistor, Photovoltaic Output Optoisolators Feature Summary

  • Integrated base terminal on the NPN phototransistor output for enhanced switching speed control
  • High insulation voltage capability of 5300 Vrms for robust signal isolation
  • Wide operating temperature range suitable for demanding industrial environments

Transistor, Photovoltaic Output Optoisolators Applications

  • Industrial communication interface isolation
  • Microcontroller input/output isolation
  • Power supply feedback loop isolation

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix or packaging variant when ordering, as the base part number may correspond to obsolete through-hole versions while surface-mount variants like MCT5211SR2M are currently active. Confirm RoHS compliance status and check for official replacement recommendations from onsemi due to potential discontinuation of the original DIP configuration.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when high isolation voltage and fast switching characteristics are required in a compact form factor. The integrated base allows for better control over saturation and storage times compared to standard phototransistors. Ensure the application voltage does not exceed the 30V collector-emitter rating and that the isolation requirements align with the 5300 Vrms specification.

Transistor, Photovoltaic Output Optoisolators Part Context

The MCT5211 belongs to the MCT52xx series of optocouplers from onsemi, which are designed for general-purpose isolation applications. This series is known for combining high reliability with cost-effective performance. The MCT5211 specifically targets applications requiring faster response times than standard optocouplers, leveraging its base-driven output structure.

Transistor, Photovoltaic Output Optoisolators Replacement Considerations

The MCT5211 is listed as obsolete. Officially confirmed substitutes include the MCT5211M (active) and compatible alternatives such as the 4N35-000E from Broadcom Limited or Vishay components. Verify pinout compatibility and electrical parameter equivalence before substitution.

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