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The MDD142-18N1 is a dual diode module manufactured by IXYS, designed for high-power rectification applications. It features a standard international package with a direct copper bonded Al2O3 ceramic base plate for efficient thermal management. The module utilizes planar passivated silicon chips to ensure long-term stability and reliability under demanding conditions. Key electrical specifications include a continuous forward current rating of 165 A and a repetitive peak reverse voltage of 1800 V. The device provides an isolation voltage of 3600 V between the terminals and the base plate, ensuring safe operation in high-voltage environments.
Verify the specific datasheet version when sourcing, as manufacturing updates may occur. Confirm that the required thermal interface material matches the direct copper bonded base plate specifications. Ensure the mounting torque aligns with the screw mount requirements for the Y4-M6 package style to maintain proper electrical isolation and thermal contact. Check for any end-of-life notifications or discontinuance notices from the manufacturer before finalizing procurement plans.
Select this component when a robust dual diode configuration is needed for 1800V circuits with currents up to 165A. The planar passivation technology offers advantages in harsh environments compared to non-passivated alternatives. Consider the 3600V isolation voltage for safety margins in high-voltage industrial setups. The standard package facilitates easier integration into existing mechanical designs compared to custom-shaped modules.
This module belongs to the MDD series of discrete semiconductor modules from IXYS, focusing on high-power diode applications. The series is characterized by its use of silicon technology and screw-mount packaging options like the Y4-M6 style. It serves as a critical component in power electronics where reliability and thermal performance are paramount, distinguishing it from lower-power surface-mount diodes.
No officially confirmed substitute part numbers are available in public documentation.