MDD220-12N1

MDD220-12N1

  • Description:DIODE MODULE GP 1200V 270A Y2DCB
  • Series:-

SKU:197d0605ba4a Category: Brand:

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Product Detailed Parameters

  • Description:DIODE MODULE GP 1200V 270A Y2DCB
  • Series:-
  • Mfr:IXYS
  • Package:Box
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):270A
  • Voltage - Forward (Vf) (Max) @ If:1.4 V @ 600 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:40 mA @ 1200 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Y2-DCB
  • Supplier Device Package:Y2-DCB
  • Grade:-
  • Qualification:-

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MDD220-12N1

Overview

The MDD220-12N1 is a high-current silicon diode module manufactured by IXYS. It features a Y2-DCB package with screw mount installation. The device supports a maximum continuous forward current of 450A and a peak reverse repetitive voltage of 1200V. It operates within a temperature range of -40°C to +150°C, with a maximum forward voltage drop of 1.4V.

Feature Summary

  • High current handling capability for industrial power applications
  • Aluminum oxide ceramic isolated metal baseplate for thermal management
  • Hard soldered joints ensuring long-term reliability

Applications

  • AC/DC motor control systems
  • Line rectifiers for transistorized AC motor controllers
  • Temperature control equipment

Procurement Notes

Verify the specific suffix N1 against official datasheets to confirm pinout and mounting compatibility. Confirm RoHS compliance status through manufacturer documentation before integration. Check for obsolescence notices as this component may be subject to lifecycle changes.

Selection Notes

Select based on the 450A current rating and 1200V blocking voltage requirements. Ensure the Y2-DCB package fits the mechanical design constraints. Verify thermal resistance values match the heatsink design for optimal performance at maximum load conditions.

Part Context

This module belongs to the MDD series of discrete semiconductor modules from IXYS. It utilizes silicon technology for robust power switching. The Y2-DCB packaging provides electrical isolation and efficient heat dissipation for high-power density designs.

Replacement Considerations

The MDD310-16N1 is listed as a potential substitute. Verify that the higher current and voltage ratings of the replacement are compatible with the existing circuit design and thermal management system.

MDD220-12N1MDD220-12N1

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