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The IXYS MDD310-08N1 is a high-power diode module featuring two parallel planar passivated chips on a direct copper bonded Al2O3-ceramic base plate. It provides an average forward current of 305 A at a case temperature of 100°C and supports a repetitive peak reverse voltage of 800 V. The device exhibits a maximum forward voltage of 1.2 V at 600 A and a junction-to-case thermal resistance of 0.129 K/W per diode under DC conditions. Rated for a maximum junction temperature of 150°C, it offers an isolation voltage of 3600 Vrms.
Verify the specific part number against official datasheets to confirm electrical ratings and physical dimensions. Ensure mounting torque specifications are strictly followed during installation to maintain thermal performance and mechanical integrity. Confirm compliance with relevant safety standards required for your specific application environment before finalizing procurement.
Select this module based on its 800 V reverse voltage capability and 305 A average current rating at specified case temperatures. Evaluate thermal management requirements using the provided junction-to-case thermal resistance values. Consider the package type and mounting configuration to ensure compatibility with existing heatsink infrastructure and system constraints.
This component belongs to the MDD310 series of high-power diode modules manufactured by IXYS. The series utilizes robust silicon planar passivation technology designed for demanding industrial applications. These modules are engineered to provide reliable performance in high-current rectification scenarios within power conversion systems.
MDD310-12N1
The maximum allowable acceleration is 50 m/s².
The typical weight including screws is 320 g.
The creepage distance on the surface is 12.7 mm.