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The IXYS MDD310-22N1 is a high-power silicon diode module featuring a direct copper bonded Al2O3 ceramic base plate. It provides a maximum repetitive reverse voltage of 2200 V and a continuous forward current rating of 305 A per diode at a case temperature of 100°C. The device utilizes planar passivated chips for robust performance. Key electrical characteristics include a peak non-repetitive surge current of 12.2 kA and an isolation voltage of 3600 Vrms. The module weighs approximately 320 g and operates within a junction temperature range of -40°C to +150°C.
Verify the specific part number against official IXYS documentation to confirm technical specifications and compliance status. Ensure that the required voltage and current ratings align with the application design parameters. Check for any product change notifications or obsolescence notices from the manufacturer prior to finalizing procurement decisions.
Select this module for applications requiring high voltage blocking capabilities up to 2200 V and significant current handling capacity. Consider the thermal management requirements based on the specified junction-to-case thermal resistance values. Evaluate the mechanical mounting constraints, as the unit requires screw mounting with specific torque specifications for reliable operation.
This component belongs to the MDD 310 series of high-power diode modules manufactured by IXYS. The series offers various voltage ratings ranging from 1200 V to 2200 V, allowing designers to choose the appropriate breakdown voltage for their specific circuit requirements while maintaining consistent current handling and physical dimensions across the family.
MDD310-20N1
The maximum repetitive reverse voltage (VRRM) for the MDD310-22N1 is 2200 V.
The module has an isolation voltage rating of 3600 Vrms at 50/60 Hz for 1 minute.
The typical weight of the module, including screws, is 320 g.