MDD810-12N2

MDD810-12N2

$143.17
  • Description:DIODE MODULE GEN PURP 1200V 807A
  • Series:-

SKU:5f418f3a8bb5 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GEN PURP 1200V 807A
  • Series:-
  • Mfr:IXYS
  • Package:Box
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):807A
  • Voltage - Forward (Vf) (Max) @ If:1.24 V @ 2000 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):16.5 µs
  • Current - Reverse Leakage @ Vr:50 mA @ 1200 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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MDD810-12N2

Overview

The MDD810-12N2 is a silicon diode module manufactured by IXYS, belonging to the MDD series. It features a single diode configuration housed in a box package. The component is rated for a maximum repetitive peak reverse voltage of 1200 V and a maximum continuous forward current of 810 A. It utilizes screw mount installation and operates within a temperature range from -40°C to +150°C.

Feature Summary

  • High current capacity suitable for heavy-duty power applications
  • Robust thermal performance with high junction temperature rating
  • Standardized mechanical mounting for reliable integration

Applications

  • Industrial motor drives
  • Power supply rectification
  • Inverter circuits

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the package dimensions and mounting hole patterns match the design requirements. Ensure the operating environment remains within the specified temperature limits to maintain reliability. Cross-reference the part number with authorized distributors to confirm availability and authenticity.

Selection Notes

Select this module when high current handling and robust voltage blocking are required in a compact form factor. Consider the thermal management capabilities and the need for screw mounting infrastructure. Evaluate the trade-off between conduction losses and switching requirements if applicable. Ensure the application voltage does not exceed the 1200 V rating under all transient conditions.

Part Context

This component is part of the IXYS MDD series of high-power diode modules. These modules are designed for demanding industrial applications requiring high reliability and efficiency. The series typically offers various current and voltage ratings to suit different power conversion needs. IXYS specializes in power semiconductors, providing solutions for energy conversion and control.

Replacement Considerations

Consult the official IXYS datasheet or contact the manufacturer directly for confirmed substitute part numbers. Do not assume cross-compatibility with other brands without verifying electrical parameters and mechanical dimensions.

MDD810-12N2MDD810-12N2
$143.17
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