MDS800

Overview

The MDS800 is an NPN radio frequency transistor manufactured by Microsemi Corporation, designed for high-power RF applications. It features a maximum collector-emitter breakdown voltage of 65V and a transition frequency of 1.09GHz. The device supports a maximum DC collector current of 60A and delivers a typical gain of 8.6dB. With a maximum power rating of 1458W and a junction temperature capability of 200°C, it utilizes the 55ST-1 chassis mount package.

Feature Summary

• High power handling capability with 1458W maximum power rating
• Robust thermal performance supporting up to 200°C junction temperature
• Chassis mount construction via 55ST-1 package for industrial integration

Applications

• RF power amplification systems
• Industrial radio frequency heating
• Plasma generation equipment

Procurement Notes

Verify component authenticity through authorized channels due to obsolete status. Confirm package integrity upon receipt as chassis mount devices require careful handling. Cross-reference datasheet revisions to ensure compatibility with existing system designs before procurement.

Selection Notes

Evaluate thermal management requirements given the 200°C junction limit. Ensure mounting hardware matches the 55ST-1 specification. Verify that system voltage does not exceed the 65V collector-emitter breakdown threshold under all operating conditions.

Part Context

This component belongs to the Microsemi RF transistor portfolio, historically utilized in demanding industrial and military RF environments. As an obsolete part, it represents legacy high-power silicon technology from the manufacturer's discrete semiconductor division.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineering teams must perform full electrical and mechanical qualification when selecting alternative components for this obsolete device.