ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
MG1021-M16 is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 4V 50MW. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MG1021-M16
- Description：RF DIODE PIN 4V 50MW
- Series：-
- Mfr：Microchip Technology
- Package：Bag
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：4V
- Current - Max：800 mA
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：50 mW
- Operating Temperature：-
- Package / Case：Stud
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MG1021-M16
RF Diode Overview
The MG1021-M16 is a GaAs Gunn epitaxial diode manufactured by Microchip Technology. It is housed in a hermetic stud package designed for radio frequency applications. The component falls under the PIN Diodes product category and sub-category of Diodes & Rectifiers. It is RoHS compliant and utilizes a Gel Pack packaging type. This device is intended for specialized RF circuit implementations requiring robust construction.
RF Diode Feature Summary
- Utilizes Gallium Arsenide (GaAs) Gunn epitaxial technology for RF performance
- Housed in a hermetic stud package for environmental protection
- Designed specifically for radio frequency applications
RF Diode Applications
- Radio frequency circuits
- RF signal generation
- Microwave oscillator applications
RF Diode Procurement Notes
Verify current availability status directly with Microchip Technology or authorized distributors, as this component may be subject to special order requirements. Confirm that the specific hermetic stud package configuration matches your thermal and mechanical design constraints. Ensure compliance with relevant regulatory standards for your target market before finalizing procurement decisions.
RF Diode Selection Notes
Select this component when designing systems requiring GaAs Gunn diode characteristics in a hermetic environment. Consider the stud package mounting requirements and thermal management needs associated with RF power dissipation. Evaluate compatibility with existing RF circuit topologies and ensure the hermetic seal meets the operational environmental specifications of the intended application.
RF Diode Part Context
This part belongs to Microchip Technology's portfolio of semiconductor devices, specifically within the diodes and rectifiers segment. The manufacturer specializes in providing solutions for industrial, automotive, aerospace, and defense markets. The MG1021-M16 represents a specialized component within their broader range of electronic parts designed for demanding technical environments.
RF Diode Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology engineering support for validated cross-reference options or alternative components suitable for equivalent RF applications.
Explore related parts through Diodes, Discrete Semiconductor Products, all product categories, ChipApex homepage.
