MG12105S-BA1MM

MG12105S-BA1MM

$48.67
  • Description:IGBT MODULE 1200V 150A 690W S3
  • Series:-

SKU:d68125702939 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:IGBT MODULE 1200V 150A 690W S3
  • Series:-
  • Mfr:Littelfuse Inc.
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 100A (Typ)
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:S-3 Module
  • Supplier Device Package:S3
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):150 A
  • Power - Max:690 W
  • Current - Collector Cutoff (Max):500 µA
  • Input Capacitance (Cies) @ Vce:7.43 nF @ 25 V

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MG12105S-BA1MM

Overview

The MG12105S-BA1MM is a high-ruggedness IGBT module manufactured by Littelfuse. It features a half-bridge configuration with a collector-emitter breakdown voltage of 1200 V and a maximum collector current of 150 A. The device is designed for chassis mounting in the S3 package format. Key electrical parameters include a power dissipation rating of 690 W, ensuring reliable operation under significant thermal loads. This component integrates insulated gate bipolar junction transistors optimized for robust industrial applications.

Feature Summary

  • High ruggedness design for demanding environments
  • Half-bridge topology for efficient power switching
  • Chassis mount capability for secure installation

Applications

  • Industrial motor drives
  • Power conversion systems
  • Inverter circuits

Procurement Notes

Verify the specific manufacturer datasheet to confirm all electrical ratings and mechanical dimensions before integration. Ensure that the sourcing channel provides authentic components from Littelfuse or authorized distributors. Check for any recent updates to the product specifications or pinout configurations. Confirm compatibility with existing cooling solutions and mounting hardware. Validate that the component status aligns with long-term availability requirements.

Selection Notes

Select this module when a 1200 V rating and 150 A current capacity are required for half-bridge applications. Consider the S3 package size for space-constrained chassis designs. Evaluate thermal management needs based on the 690 W power dissipation specification. Compare against alternative modules if higher current or voltage ratings are necessary. Ensure the operating temperature range meets the system's environmental constraints.

Part Context

This component belongs to Littelfuse's portfolio of power semiconductor modules. It utilizes Insulated Gate Bipolar Junction Transistor technology for high-efficiency switching. The S3 package is a standard form factor for chassis-mounted power devices. The half-bridge configuration allows for versatile circuit topologies in power electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Littelfuse technical support for direct replacements or cross-references. Verify compatibility with existing PCB layouts and thermal interfaces when considering alternatives.

MG12105S-BA1MMMG12105S-BA1MM
$48.67
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