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Product Detailed Parameters
- Description：IGBT MODULE 1200V 210A 1100W D3
- Series：-
- Mfr：Littelfuse Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 150A (Typ)
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：D3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：210 A
- Power - Max：1100 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：11 nF @ 25 V
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Overview
The MG12150D-BA1MM is a half-bridge IGBT module manufactured by Littelfuse Inc. It features a 1200V collector-emitter voltage and a continuous collector current of 210A. The module utilizes the D3 package for chassis mounting. Maximum power dissipation is rated at 1100W. The device incorporates fast free-wheeling diodes and exhibits a positive temperature coefficient. It is designed for high ruggedness and short circuit capability with ultra-low loss characteristics.
Feature Summary
- Ultra low switching and conduction losses
- High ruggedness with enhanced short circuit capability
- Positive temperature coefficient for safe parallel operation
- Integrated fast free-wheeling diodes
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized Littelfuse distributors or certified partners. Confirm datasheet revision and RoHS3 compliance status prior to ordering. Check for end-of-life notices as manufacturing status may vary. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues during assembly.
Selection Notes
Select this module for applications requiring high voltage isolation and robust thermal performance in compact chassis mounts. Evaluate thermal resistance requirements against system heat sink capabilities. Consider the 210A current rating relative to peak load demands. Verify gate drive compatibility with standard IGBT control signals. Assess short circuit withstand time against fault protection circuitry response speeds.
Part Context
This component belongs to Littelfuse's M series power modules, specifically the G type IGBT configuration. It is part of the D3 package family designed for high-power density applications. The BA1MM suffix indicates specific terminal and pinout configurations within the product line. It serves as a discrete power switching element in medium to high-power electronic conversion systems.
Replacement Considerations
The MG12100D-BA1MM is a related variant within the same product family. Verify electrical parameter compatibility before substitution. Ensure mechanical footprint and pin assignment match the existing design. Confirm that thermal characteristics align with the original system requirements.
