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Product Detailed Parameters
- Description：IGBT MOD 1200V 200A 625W
- Series：-
- Mfr：Littelfuse Inc.
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 150A (Typ)
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Power - Max：625 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：10.5 nF @ 25 V
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Overview
The Littelfuse MG12150W-XN2MM is a dual IGBT silicon module utilizing Trench Field Stop technology. It features a voltage rating of 1200 V and a continuous collector current of 200 A. The module supports a maximum power dissipation of 625 W with a thermal resistance of 0.4 K/W. Designed for chassis mounting, it integrates high-level functionality within a robust package suitable for demanding power conversion environments.
Feature Summary
- Incorporates IGBT3 CHIP with Trench plus Field Stop technology
- Provides low saturation voltage characteristics
- Exhibits positive temperature coefficient behavior
Applications
- Three-phase inverter systems
- Industrial motor drives
- Power supply units
Procurement Notes
Verify the specific ordering suffix to ensure correct pinout and configuration compatibility. Confirm that the chassis mounting interface matches the mechanical design requirements. Cross-reference the datasheet electrical parameters against the application load conditions to validate performance margins before finalizing procurement decisions.
Selection Notes
Select this component when high integration and efficient thermal management are required for three-phase applications. The positive temperature coefficient aids in parallel operation stability. Ensure the chassis mounting capability aligns with the system's mechanical constraints and cooling infrastructure for optimal heat dissipation.
Part Context
This module belongs to the Littelfuse dual IGBT silicon series designed for high-power density applications. It represents an evolution in IGBT technology by combining trench gate architecture with field stop structures. This combination targets improved switching performance and reduced conduction losses compared to earlier generations.
Replacement Considerations
Consult official Littelfuse documentation for direct cross-references. Verify pin-to-pin compatibility and thermal resistance values when evaluating alternative modules from other manufacturers or different product lines within the same family.
