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Product Detailed Parameters
- Description：IGBT MODULE 1700V 250A 890W D3
- Series：-
- Mfr：Littelfuse Inc.
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 150A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：D-3 Module
- Supplier Device Package：D3
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：250 A
- Power - Max：890 W
- Current - Collector Cutoff (Max)：3 mA
- Input Capacitance (Cies) @ Vce：13.6 nF @ 25 V
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Overview
The MG17150D-BN4MM is a 1700V, 150A IGBT power module utilizing IGBT3 Trench+Field Stop technology for the switch and EMCON 3 technology for the free-wheeling diode. It features low turn-off losses with short tail current and a positive temperature coefficient for VCE(sat). The module supports high-frequency switching with a maximum junction temperature of 150°C and an insulation test voltage of 4000V AC. Key electrical parameters include a DC collector current of 250A at 25°C, a typical VCE(sat) of 2.45V at 150A/25°C, and a forward voltage of 2.2V for the diode at 150A/25°C.
Feature Summary
- IGBT3 chip technology providing low turn-off losses and short tail current
- EMCON 3 free-wheeling diode technology ensuring fast and soft reverse recovery
- Positive temperature coefficient for collector-emitter saturation voltage
Applications
- High frequency switching applications
- Medical equipment
- Motion and servo control systems
- Uninterruptible Power Supply (UPS) systems
Procurement Notes
Verify the specific ordering suffix BN4MM against the manufacturer's latest datasheet to confirm assembly site and marking details. Ensure thermal interface materials and mounting torque specifications (3-5 N·m for module-to-sink) are strictly followed during installation to maintain performance and reliability standards.
Selection Notes
Select this module for designs requiring 1700V blocking capability and up to 150A continuous current at 80°C case temperature. Consider the integrated gate resistor value of 4.3 Ω and the specific switching energy characteristics when designing the gate drive circuitry for optimal performance in high-frequency environments.
Part Context
This component belongs to Littelfuse's IGBT power module lineup, specifically designed for industrial and medical power conversion needs. It integrates both the IGBT switch and the anti-parallel diode into a single package, simplifying the design of half-bridge or inverter circuits compared to discrete component solutions.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Verify compatibility with existing PCB footprints and thermal management requirements if considering alternative manufacturers' modules with similar voltage and current ratings.
