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The Powerex MG300Q2YS60A is a Dual IGBTMOD Compact IGBT Series module rated for 1200 V collector-emitter voltage and 300 A continuous collector current. It integrates two N-channel IGBTs in a half-bridge configuration, each paired with a reverse-connected super-fast recovery free-wheel diode. The device features an isolated baseplate for simplified thermal management and includes built-in over-current and over-temperature protection circuits. Key electrical parameters include a maximum junction temperature of 150°C, an isolation voltage of 2500 VAC, and a typical collector-emitter saturation voltage of 2.4 V at 300 A.
Verify the specific ordering suffix against official Powerex documentation to ensure correct pinout and terminal configuration. Confirm that the mounting torque specifications for M5 and M6 screws align with the mechanical requirements of the target application to prevent damage during installation.
Select this component for high-power switching applications requiring integrated fault protection. Ensure the gate drive circuit provides the recommended voltage range of 14.8 to 17 V and utilizes a gate resistance of at least 6.8 Ω. Verify that the thermal interface material meets the contact thermal resistance requirements for the intended operating temperature range.
This module belongs to the Dual IGBTMOD Compact IGBT Series from Powerex, designed specifically for robust switching performance in industrial power electronics. The series emphasizes reliability through integrated protection features and compact packaging suitable for space-constrained inverter designs.
Consult official cross-reference lists or manufacturer compatibility guides for verified substitute part numbers. Do not assume functional equivalence based solely on voltage and current ratings without verifying pin configurations and protection circuit details.
The recommended supply voltage applied across the C1-E2 terminals should be less than or equal to 750 Volts.
The module includes dedicated OT (Over-Temperature) and FO (Fault Output) pins that activate under fault conditions, such as excessive junction temperature or over-current events, to signal the control system.
The typical junction-to-case thermal resistance for the IGBT portion of the half-module is 0.044 °C/Watt.