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The MGP15N60U is an N-channel enhancement-mode silicon gate Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes an advanced termination scheme to ensure reliable high-voltage blocking capabilities. The device features fast switching characteristics, resulting in efficient operation at high frequencies. Key electrical parameters include a typical low on-voltage of 1.7 V at 8.0 A and 125°C, and a typical high-speed turn-off energy (Eoff) of 67 μJ/A at 125°C. It is housed in an industry-standard TO-220 package and includes integrated ESD protection via gate-emitter Zener diodes.
The MGP15N60U belongs to the legacy IGBT portfolio originally developed under Motorola before its semiconductor division became onsemi. It represents an earlier generation of insulated gate bipolar transistors designed for robust performance in medium-power applications. This component serves as a predecessor or alternative to newer series such as the FGPF15N60UNDF, which shares similar voltage and current ratings but may feature updated packaging or electrical specifications.
Verify pinout compatibility when substituting with modern equivalents like the FGPF15N60UNDF. Check if the replacement part's saturation voltage and switching energy meet the original design's thermal and efficiency requirements.