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Product Detailed Parameters
- Description：IGBT, 6A, 600V, N-CHANNEL
- Series：*
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MGP4N60E is a silicon N-channel power MOSFET from onsemi, belonging to the SuperFET II family. It features a 600V drain-source breakdown voltage and a continuous drain current of 4A in a TO-220AB package. The device exhibits a maximum on-resistance of 1.5 ohms at a gate-source voltage of 10V. Key electrical parameters include a gate threshold voltage of 3.5V, a total gate charge of 18nC, and a power dissipation rating of 50W. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Integrated fast body diode for efficient switching applications
- Low gate charge for reduced driving losses
- Enhanced Vds capability for robust performance
Applications
- High voltage resonant half-bridge converters
- Zero-voltage switching (ZVS) flyback converters
- High frequency DC-to-DC converters
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets. Check for end-of-life notifications as availability may be restricted. Ensure proper handling procedures are followed during installation.
Selection Notes
Evaluate thermal management requirements based on the 50W power dissipation limit. Consider the 1.5 ohm on-resistance for conduction loss calculations. Verify gate drive compatibility with the specified threshold voltage. Assess package suitability for the intended mounting configuration.
Part Context
This component is part of onsemi's SuperFET II series, designed for high-frequency power conversion. It integrates a fast recovery body diode to improve efficiency in hard-switching topologies. The technology focuses on reducing switching losses while maintaining reliable operation under high voltage stress conditions.
Replacement Considerations
Direct substitutes include FCP099N60E, FCPF190N60E, and FCP16N60. Verify pinout compatibility and thermal characteristics before substitution. Ensure replacement parts meet the same voltage and current ratings.
