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Product Detailed Parameters
- Description：IGBT, 6A, 600V, N-CHANNEL
- Series：*
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The MGP4N60ED is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 6 A. The device utilizes an anti-parallel diode configuration within its package. It is designed for through-hole mounting in a TO-220 style housing, suitable for applications requiring robust switching performance at moderate current levels.
Feature Summary
- Integrates an anti-parallel diode with the IGBT chip
- Designed for high-voltage switching applications up to 600 V
- Single N-channel configuration for simplified circuit design
Applications
- Motor control drives
- Power supply inverters
- Induction heating circuits
Procurement Notes
Verify the specific datasheet revision and package variant when sourcing, as legacy components may have multiple manufacturing updates. Confirm that the required thermal management solution aligns with the component's power dissipation limits under your specific operating conditions. Ensure compatibility with standard TO-220 mounting hardware.
Selection Notes
Select this component for low-to-medium current switching tasks where integrated freewheeling diode functionality is required. Consider the 6 A current limit and 600 V blocking capability against your peak load requirements. Evaluate thermal resistance parameters if operating near maximum ratings to ensure junction temperature safety margins are maintained.
Part Context
This part belongs to onsemi's legacy discrete semiconductor portfolio, specifically targeting general-purpose power switching needs. It represents an earlier generation of IGBT technology compared to modern field-stop or trench designs, offering reliable performance for established industrial and consumer electronics applications.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching voltage, current, and package specifications with equivalent legacy IGBTs from other manufacturers.
