ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT, 10A, 600V, N-CHANNEL
- Series：*
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The MGP7N60ED is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a breakdown voltage of 600 V and a continuous collector current rating of 10 A. The device utilizes an advanced termination scheme for robust performance. It is co-packaged with a soft recovery ultra-fast rectifier, enhancing switching characteristics. The component operates within a temperature range of -55°C to +150°C and is housed in a TO-220AB package.
Feature Summary
- Co-packaged with a soft recovery ultra-fast rectifier
- Advanced termination scheme for reliability
- Single N-channel IGBT configuration
Applications
- Industrial motor drives
- Power supply units
- Inverter circuits
Procurement Notes
Verify the specific datasheet revision and electrical parameters against the official onsemi documentation before integration. Confirm that the TO-220AB package dimensions match the thermal management requirements of the target design. Ensure the co-packaged rectifier specifications align with the system's reverse recovery needs. Cross-reference the part number with authorized distributors to confirm availability and authenticity.
Selection Notes
Select this component for applications requiring high-voltage switching with integrated freewheeling capabilities. The 600V rating suits medium-voltage industrial systems. Consider the thermal resistance of the TO-220AB package for heat dissipation planning. Evaluate the combined IGBT and rectifier performance for efficiency optimization in hard-switching environments compared to discrete solutions.
Part Context
This IGBT belongs to onsemi's discrete power transistor portfolio, designed for general-purpose high-power switching. It integrates a fast diode to simplify circuit topology. The SuperFET or similar proprietary technology may influence its switching behavior. It serves as a core switching element in power conversion stages where compactness and reduced component count are prioritized.
Replacement Considerations
Direct substitutes include other 600V, 10A N-channel IGBTs in TO-220 packages from onsemi or competitors. Verify pinout compatibility and thermal characteristics when swapping. Check if alternative parts offer improved switching speeds or lower conduction losses. Ensure the replacement also includes an integrated anti-parallel diode if required by the original design.
