MGS801A

RF Diode Overview

The MGS801A is a single junction GaAs Schottky diode designed for millimeter wave components operating up to 60 GHz. It utilizes a beam lead flip chip configuration with outline GC110. Key electrical parameters at TA = +25°C include a forward voltage (VF) range of 650 mV to 750 mV, a breakdown voltage (VBR) minimum of 5 V, and a junction capacitance (CJ) range of 0.05 pF to 0.075 pF. The series resistance (RS) maximum is 5 ohms. Absolute maximum ratings specify a reverse voltage rated Vbr, a forward current of 50 mA, and DC power dissipation of 75 mW per junction at 25°C.

RF Diode Feature Summary

• Optimized performance in millimeter wave components operating to 60 GHz
• Available in beam lead, flip chip, or packaged devices
• Hi-Rel screening available per MIL-PRF-19500 and MIL-PRF-38534

RF Diode Applications

• Millimeter wave components
• High frequency RF circuits

RF Diode Procurement Notes

Verify the specific ordering suffix and revision level against the official MACOM datasheet before procurement. Confirm that the required reliability screening meets project specifications, as Hi-Rel options are available but not standard. Ensure the supplier provides traceability documentation consistent with the manufacturer's terms and conditions of sale.

RF Diode Selection Notes

Select the MGS801A when a single junction GaAs Schottky diode is required for high-frequency applications up to 60 GHz. Compare the CJ and RS values against circuit requirements to ensure signal integrity. Consider the MGS801 if lower series resistance is acceptable, or the MGS9xx series if packaged alternatives are preferred over flip chip configurations.

RF Diode Part Context

The MGS801A belongs to the MGS8xx/MGS9xx series of GaAs Schottky diodes manufactured by MACOM Technology Solutions. This series offers 14 different configurations, including single junctions, anti-parallel pairs, and multi-junction ring-quad or bridge-quad arrangements. The family supports both beam lead and packaged device formats for versatile integration into RF systems.

RF Diode Replacement Considerations

The MGS801 is a functional alternative within the same series offering identical single junction configuration but with a higher maximum series resistance of 7 ohms compared to the 5 ohms of the MGS801A.