MGS903

RF Diode Overview

The MGS903 is a GaAs Schottky diode configured as a Series Tee, designed for millimeter wave components operating up to 60 GHz. It features a beam lead or packaged device structure with a GB310 outline configuration. Key electrical parameters at TA = +25°C include a forward voltage (VF) range of 650 mV to 750 mV and a breakdown voltage (VBR) maximum of 20 V. The junction capacitance (CJ) ranges from 5 pF to 0.06 pF, with a differential capacitance (ΔCJ) of 0.02 pF and series resistance (RS) of 7 Ω.

RF Diode Feature Summary

• Series Tee configuration optimized for millimeter wave applications
• Beam lead or packaged device construction options
• High reliability screening available per MIL-PRF-19500 and MIL-PRF-38534

RF Diode Applications

• Millimeter wave components operating to 60 GHz
• RF and microwave circuit designs requiring Schottky diodes

RF Diode Procurement Notes

Verify the specific package type and screening level required for your application when ordering. Confirm that the supplier provides official MACOM documentation to ensure authenticity. Check for any updated datasheet revisions that may affect mechanical dimensions or electrical tolerances before finalizing procurement specifications.

RF Diode Selection Notes

Select the MGS903 when a Series Tee configuration is needed for high-frequency operation. Ensure the design accommodates the specified junction capacitance and series resistance values. Consider the thermal dissipation limits and operating temperature range during circuit layout to maintain performance within the stated absolute maximum ratings.

RF Diode Part Context

The MGS903 belongs to the MGS8xx/MGS9xx series of GaAs Schottky diodes manufactured by MACOM Technology Solutions. This series offers various configurations including single junction, anti-parallel pairs, and multi-junction rings and bridges. These devices are engineered for high-performance millimeter wave applications.

RF Diode Replacement Considerations

Consult the official MACOM datasheet for direct substitutes within the MGS8xx/MGS9xx series. Verify compatibility of electrical parameters such as VF, VBR, and CJ before replacing. Other manufacturers' GaAs Schottky diodes may require significant circuit redesign due to differing characteristics.